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FDW2503N
July 2008
FDW2503N
Dual N-Channel 2.5V Specified PowerTrench MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor's advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V).
Features
* 5.5 A, 20 V. RDS(ON) = 0.021 @ VGS = 4.5 V RDS(ON) = 0.035 @ VGS = 2.5 V
* Extended VGSS range (12V) for battery applications * Low gate charge * High performance trench technology for extremely low RDS(ON) * Low profile TSSOP-8 package
Applications
* Load switch * Motor drive * DC/DC conversion * Power management
G2 S2 S2 D2 G1 S1 S1 D1
Pin 1
1 2 3 4
8 7 6 5
TSSOP-8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
20 12
(Note 1a)
Units
V V A W C
5.5 30 1.0 0.6 -55 to +150
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
125 208
C/W
Package Marking and Ordering Information
Device Marking 2503N
2008 Fairchild Semiconductor Corporation
Device FDW2503N
Reel Size 13''
Tape width 12mm
Quantity 2500 units
FDW2503N Rev D1 (W)
FDW2503N
Electrical Characteristics
Symbol
BVDSS BVDSS ===TJ IDSS IGSSF IGSSR VGS(th) VGS(th) ===TJ RDS(on)
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 A ID = 250 A,Referenced to 25C VDS = 16 V, VGS = 12 V, VGS = -12 V VGS = 0 V VDS = 0 V VDS = 0 V
Min
20
Typ
Max Units
V
Off Characteristics
14 1 100 -100 0.6 0.8 -3.2 17 24 23 30 26 1082 277 130 8 8 24 8 VDS = 10 V, VGS = 4.5 V ID = 5.5 A, 12 2 3 0.83
(Note 2)
mV/C A nA nA V mV/C 21 35 34 A S pF pF pF 20 27 38 16 17 ns ns ns ns nC nC nC A V m
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = VGS, ID = 250 A ID = 250 A,Referenced to 25C VGS = 4.5 V, ID = 5.5 A ID = 4.2 A VGS = 2.5 V, VGS = 4.5 V, ID = 5.5A, TJ=125C VGS = 4.5 V, VDS = 5 V, VDS = 5 V ID = 5.5 A
1.5
ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD
Dynamic Characteristics
VDS = 10 V, f = 1.0 MHz V GS = 0 V,
Switching Characteristics
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 10 V, VGS = 4.5 V,
ID = 1 A, RGEN = 6
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.83 A 0.7 1.2
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA is 125C/W (steady state) when mounted on a 1 inch copper pad on FR-4.
b) RJA is 208 C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDW2503N Rev. D1 (W)
FDW2503N
Typical Characteristics
30 25 ID, DRAIN CURRENT (A) 20 15 10 5 0 0
2.5 3.5V 3.0V 2.5V 2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V
2
VGS = 2.0V
1.5
2.5V 3.0V 3.5V 4.0V
1
4.5V
0.5 0.5 1 1.5 2 2.5 3 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.07 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
ID = 5.5A VGS = 4.5V
ID = 2.8 A 0.06 0.05 0.04 TA = 0.03 0.02 0.01 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 125oC
1.4
1.2
1
0.8
TA = 25oC
0.6 -50 -25 0 25 50 75 100
o
125
150
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
30 25 ID, DRAIN CURRENT (A) 125oC 20 15 10 5 0 0.5 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 25 C
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 IS, REVERSE DRAIN CURRENT (A) VGS = 0V 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125oC 25oC -55oC
VDS = 5V
TA = -55oC
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDW2503N Rev. D1 (W)
FDW2503N
Typical Characteristics
5 VGS, GATE-SOURCE VOLTAGE (V) ID = 5.5A 4 15V 3 VDS = 5V 10V CAPACITANCE (pF)
1800 1500 CISS 1200 900 600 300 0 0 2 4 6 8 10 12 14 0 4 8 12 16 20 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) COSS CRSS f = 1MHz VGS = 0 V
2
1
0
Figure 7. Gate Charge Characteristics.
100 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 1s 1 VGS = 4.5V SINGLE PULSE RJA = 208oC/W TA = 25oC 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 10s DC 0.1 10ms 100ms
Figure 8. Capacitance Characteristics.
50 P(pk), PEAK TRANSIENT POWER (W)
1ms
40
SINGLE PULSE RJA = 208C/W TA = 25C
30
20
10
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
0.1
0.1 0.05 0.02 0.01
RJA(t) = r(t) + RJA RJA = 208 C/W P(pk) t1
SINGLE PULSE
0.01
t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.001 0.0001
0.001
0.01
0.1 t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDW2503N Rev. D1 (W)
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM *
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Rev. I35

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